| electronica.de |
|
|
Industry / Automation Last update: 17.05.2012
MicrosemiNew generation of super-efficient NPT IGBTsMicrosemi Corporation introduced the first in a series of new generation 1200 volt (V) non-punch through (NPT) IGBTs. The new family of IGBTs leverages Microsemi's leading-edge Power MOS 8™ technology, and offers a dramatic reduction of 20 percent or more in total switching and conduction losses as compared to competitive solutions. The IGBTs are targeted at applications including welding, solar inverters, and uninterruptible and switch mode power supplies. 
 Further articles in Industry / Automation: Last update: 14.05.2012
Last update: 10.05.2012
Last update: 08.05.2012
Toshiba Electronics Europe New process for 600V MOSFETs delivers ultra-low RDS(ON) and reduced switching losses
|
| URL of this site: | |||
 | |||
|
|
||